The IPD65R600E6 is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Pins | 3 |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD65R600E6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the .
* Extremely low losses due to very low F O M R dson*Qg and E oss * Very high commutation ruggedness * Easy to use/drive * JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl. |
| Part Number | IPD65R600E6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Very high commutation ruggedness *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
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