| Part Number | IPD70R600CE Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Very high commutation ruggedness *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
IPD70R600CE Datasheet and Specifications PDF
The IPD70R600CE is a N-Channel MOSFET.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Height | 2.56 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD70R600CE Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
IPD70R600CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInf.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *Qualifiedforstandardgradeapplications Applications Adapter,LCD&PDPTVandIndoorlighting Table1KeyPerformanceParameters. |