IPD80R1K0CE Datasheet and Specifications PDF

The IPD80R1K0CE is a MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD80R1K0CE Datasheet
ManufacturerInfineon
Overview CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencyleve. 1)
*Highvoltagetechnology
*Extremedv/dtrated
*Highpeakcurrentcapability
*Lowgatecharge
*Loweffectivecapacitances
*QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
*Pb-freeleadplating;RoHScomp1l)iant;halogenfreemoldcompound DPAK tab 2 1 3.
Part NumberIPD80R1K0CE Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu.
*Static drain-source on-resistance: RDS(on)≤0.95Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source .

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