The IPD80R2K8CE is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD80R2K8CE Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤2.8Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |
| Part Number | IPD80R2K8CE Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencyleve.
*Highvoltagetechnology *Extremedv/dtrated *Highpeakcurrentcapability *Lowgatecharge *Loweffectivecapacitances *Qualified according to JEDEC Standard *Pb-freeleadplating;RoHScompliant;halogenfreemoldcompound DPAK tab 2 1 3 IPAK tab 1 23 Drain Pin 2 Gate Pin 1 Source Pin . |
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