IPD90R1K2C3 Datasheet and Specifications PDF

The IPD90R1K2C3 is a Power Transistor.

Key Specifications

Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIPD90R1K2C3 Datasheet
ManufacturerInfineon
Overview IPD90R1K2C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ .
* Lowest figure-of-merit RON x Qg
* Extreme dv/dt rated
* High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2 Ω 28 nC
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant; available in Halogen free mold .
Part NumberIPD90R1K2C3 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.2Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.

Price & Availability

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Newark 850 1+ : 2.19 USD
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