The IPD90R1K2C3 is a Power Transistor.
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | IPD90R1K2C3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPD90R1K2C3
CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ
.
* Lowest figure-of-merit RON x Qg * Extreme dv/dt rated * High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2 Ω 28 nC * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant; available in Halogen free mold . |
| Part Number | IPD90R1K2C3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.2Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 850 | 1+ : 2.19 USD 10+ : 1.4 USD 25+ : 1.26 USD 50+ : 1.1 USD |
View Offer |
| Future Electronics | 2500 | 2500+ : 1.27 USD 5000+ : 1.26 USD |
View Offer |
| Future Electronics | 0 | 2500+ : 1.27 USD 5000+ : 1.26 USD |
View Offer |