IPI051N15N5 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.

*Static drain-source on-resistance: RDS(on) ≤5.1mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
* Ideal for high-frequency switching and synchronous rectification
*ABSOLUTE MAXIMUM RAT.

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Package
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*175°Coperatingtemperature
*Pb-freeleadplating;RoHScompliant
*QualifiedaccordingtoJEDEC1)fortargetapplication
*Idealforhigh-frequencyswitchingandsynchronousrectification
*Halogen-freeac.