| Part Number | IPI26CN10N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic.
*With To-262 package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT . |
IPI26CN10N Datasheet and Specifications PDF
The IPI26CN10N is a N-Channel MOSFET.
Key Specifications
| Package | TO-262-3 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPI26CN10N Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
P.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application . |