The IPP051N15N5 is a N-Channel MOSFET.
| Height | 20.7 mm |
|---|---|
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP051N15N5 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPP051N15N5，IIPP051N15N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo.
*Static drain-source on-resistance: RDS(on) ≤5.1mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION * Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RAT. |
| Part Number | IPP051N15N5 Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . ..
*ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *175°Coperatingtemperature *Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplication *Idealforhigh-frequencyswitchingandsynchronousrectification *Halogen-freeaccording. |
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