The IPP057N08N3 is a N-Channel MOSFET.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP057N08N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPP057N08N3， IIPP057N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L.
*Static drain-source on-resistance: RDS(on) ≤5.7mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |
| Part Number | IPP057N08N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview | IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"#™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q . Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 1D9? > Product Summary V 9H R , ? >=1H, & . |
| Seller | Inventory | Price Breaks | Buy |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPP057N08N3G | Infineon | Power-Transistor |