| Part Number | IPP076N12N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant; halogen free * Qualified according to JEDEC1) for target applic. |
IPP076N12N3 Datasheet PDF
The IPP076N12N3 is a Power-Transistor.
| Part Number | IPP076N12N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPP076N12N3，IIPP076N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo.
*Static drain-source on-resistance: RDS(on) ≤7.6mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RATI. |