IPP180N10N3 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP180N10N3，IIPP180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te.

*Static drain-source on-resistance: RDS(on) ≤18mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=2.

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