IPP410N30N Datasheet and Specifications PDF

Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoH.

*N-channel,normallevel
*FastDiodewithreducedQrr
*Optimizedforhardcommutationruggedness
*Verylowon-resistanceRDS(on)
*175°Coperatingtemperature
*Pb-freeleadplating;RoHScompliant
*QualifiedaccordingtoJEDEC1)fortargetapplication
*Halogen-freeaccordingtoIEC61249-2-2.

isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot .

*Static drain-source on-resistance: RDS(on) ≤41mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Optimized for hard commutation ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.