The IPP50R199CP is a Power Transistor.
| Package | TO-220-3 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP50R199CP Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
CoolMOSTM Power Transistor
Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied a.
* Lowest figure-of -merit RON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R199CP 550 V 0.199 Ω 34 nC PG-TO220. |
| Part Number | IPP50R199CP Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IPP50R199CP，IIPP50R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-.
*Static drain-source on-resistance: RDS(on) ≤0.199Ω *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ultra low gate charge *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
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