IPP50R350CP Datasheet and Specifications PDF

The IPP50R350CP is a Power Transistor.

Key Specifications

PackageTO-220-3
Pins3
Height15.95 mm
Length10.36 mm
Width4.57 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIPP50R350CP Datasheet
ManufacturerInfineon
Overview IPP50R350CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated Product Summary VDS @Tjmax RDS(on),max Qg,typ 550 V 0.350 W 19 nC • .
* Lowest figure-of-merit RON x Qg
* Ultra low gate charge
* Extreme dv/dt rated Product Summary VDS @Tjmax RDS(on),max Qg,typ 550 V 0.350 W 19 nC
* High peak current capability
* Pb-free lead plating; RoHS compliant; Halogen free for mold compound
* Qualified for industrial grade applications ac.
Part NumberIPP50R350CP Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPP50R350CP,IIPP50R350CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.35Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L.
*Static drain-source on-resistance: RDS(on) ≤0.35Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 9699 100+ : 1.02 USD
500+ : 0.918 USD
1000+ : 0.8466 USD
10000+ : 0.7548 USD
View Offer
Win Source 17300 40+ : 1.4745 USD
100+ : 1.2099 USD
150+ : 1.1721 USD
205+ : 1.1342 USD
View Offer
Win Source 10400 90+ : 0.585 USD
210+ : 0.48 USD
325+ : 0.465 USD
445+ : 0.45 USD
View Offer