IPP65R074C6 Datasheet and Specifications PDF

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·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Vo.

*Static drain-source on-resistance: RDS(on) ≤0.074Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use .