IPP90R800C3 Datasheet and Specifications PDF

CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead platin.

* Lowest figure-of-merit RON x Qg
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant
* Ultra low gate charge IPP90R800C3 Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 V 0.8 Ω 4.

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot var.

*With TO-220 packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(T.