IPW60R080P7 Datasheet and Specifications PDF

The IPW60R080P7 is a MOSFET.

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Part NumberIPW60R080P7 Datasheet
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding  commutationruggedness
*Significantreductionofswitchingandconductionlosses
*ExcellentESDrobustness>2kV(HBM)forallproducts
*BetterRDS(on)/packageproductscomparedtocompetitionenabledbya  lowRDS(on)*A.
Part NumberIPW60R080P7 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R080P7 IIPW60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤80mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L.
*Static drain-source on-resistance: RDS(on)≤80mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V.