IPW60R099C7 Datasheet

The IPW60R099C7 is a N-Channel MOSFET.

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Part NumberIPW60R099C7
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099C7 IIPW60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L.
*Static drain-source on-resistance: RDS(on)≤99mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Suitable for hard and soft switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-.
Part NumberIPW60R099C7
DescriptionMOSFET
ManufacturerInfineon
Overview CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombine.
*Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
*IncreasedMOSFETdv/dtruggednessto120V/ns
*IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
*BestinclassRDS(on)/package
*QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 .