IPW60R160P6 Datasheet and Specifications PDF

CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe ex.

*IncreasedMOSFETdv/dtruggedness
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PF.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R160P6 IIPW60R160P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-.

*Static drain-source on-resistance: RDS(on)≤160mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 .