| Part Number | IRF1407SPbF Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. on. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1407LPbF IRF1407SPbF Package Type TO-262 D2-Pak S. |
IRF1407SPbF Datasheet and Specifications PDF
The IRF1407SPbF is a Power MOSFET.
Key Specifications
| Package | D2PAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.826 mm |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF1407SPBF Datasheet |
|---|---|
| Description | Power MOSFETs |
| Manufacturer | International Rectifier |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. application. The through-hole version (IRF1407L) is available for low- profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power. |