| Part Number | IRF1607 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. T. |
IRF1607 Datasheet and Specifications PDF
The IRF1607 is a Power MOSFET.
Key Specifications
| Package | TO-220AB |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 5.084 mm |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF1607 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRF1607，IIRF1607
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance: RDS(on) ≤7.5mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |