| Part Number | IRF2807Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques . |
IRF2807Z Datasheet
The IRF2807Z is a AUTOMOTIVE MOSFET.
| Part Number | IRF2807Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRF2807Z, IIRF2807Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot va.
*Static drain-source on-resistance: RDS(on) ≤8.4mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Synchronous Rectifier applications *Resonant mode power supplies *Battery powered circui. |