| Part Number | IRF2807ZS |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques . |
IRF2807ZS Datasheet
The IRF2807ZS is a AUTOMOTIVE MOSFET.
| Part Number | IRF2807ZS |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IRF2807ZS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |