IRF333 Datasheet
IRF333 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
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IRF333 Datasheet (Samsung Semiconductor)
Samsung Semiconductor
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IRF333 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applic.
E Semiconductor
isc N-Channel Mosfet Transistor
*ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON)
Drain-Source Resistance
On-stage VGS= 10V; ID= 3.0A
IGSS G.