| Part Number | IRF4104 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th.
* Advanced Process Technology * Ultra Low On-Resistance * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely lo. |
IRF4104 Datasheet and Specifications PDF
The IRF4104 is a Power MOSFET.
| Part Number | IRF4104 Datasheet |
|---|---|
| Description | N-Channel 40-V (D-S) MOSFET |
| Manufacturer | Freescale Semiconductor |
| Overview |
Freescale
N-Channel 40-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Syste.
* Low rDS(on) trench technology * Low thermal impedance * Fast switching speed Typical Applications: * White LED boost converters * Automotive Systems * Industrial DC/DC Conversion Circuits IRF4104/ MCP4104 VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 5 @ VGS = 10V 7.5 @ VGS = 5.5V ID(A) 90a DRAIN . |
| Part Number | IRF4104 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF4104，IIRF4104
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M.
*Static drain-source on-resistance: RDS(on) ≤5.5mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |