IRF543 Datasheet and Specifications PDF

The IRF543 is a N-Channel Power MOSFETs.

IRF543 integrated circuit image
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Part NumberIRF543 Datasheet
ManufacturerHarris
Overview These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the br.
* 25A and 28A, 80V and 100V
* rDS(ON) = 0.077Ω and 0.100Ω
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information P.
Part NumberIRF543 Datasheet
DescriptionN-Channel Mosfet Transistor
ManufacturerInchange Semiconductor
Overview INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF543 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requiremen.
*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements
*DESCRITION
*Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
*ABSOLUTE MAXIMUM R.
Part NumberIRF543 Datasheet
DescriptionN-Channel MOSFET
ManufacturerSTMicroelectronics
Overview IRF 540/FI-541/FI IRF 542/FI-543/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 . gate voltage (RGS =20 Kn) Gate-source voltage Drain current (pulsed) Drain inductive current, clamped (L = 100 fLH) Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Total dissipation at Tc <25°C Derating .
Part NumberIRF543 Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerFairchild Semiconductor
Overview . .