IRF634 Datasheet and Specifications PDF

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µ.

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 250V
* Lower RDS(ON): 0.327Ω (Typ.) 1 2 3 IRF634A BVDSS = 250 V RDS(on) = 0.45Ω ID = 8.1 A TO-220 1.Gate 2. Drai.

cUsing the latest high voltage MESH OVERLAY™ duprocess, STMicroelectronics has designed an roadvanced family of power MOSFETs with outstanding performance. The new patented PSTrip layout coupled with .

Type IRF634 IRF634FP VDSS 250V 250V RDS(on) <0.45Ω <0.45Ω ID 8A 8A 33 22
* Extremely High dv/dt Capability 11 TO-220 TO-220FP
* 100% Avalanche Tested t(s)Description cUsing the latest high voltage MESH OVERLAY™ duprocess, STMicroelectronics has designed an roadvanced family of power MOSFE.

MOSFET IRF634 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;I D=8.1A 1.gate 2.drain 3.source ‹ Absolute Maximu.

With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;I D=8.1A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 T.

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