| Part Number | IRF643 Datasheet |
|---|---|
| Manufacturer | GE |
| Overview |
~[R1D~LP~
FIELD EFFECT POWER TRANSISTOR
IRF642,643
16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to .
* Polysilicon gate - Improved stability and reliability * No secondary breakdown - Excellent ruggedness * Ultra-fast switching - Independent of temperature * Voltage controlled - High transconductance * Low input capacitance - Reduced drive requirement * Excellent thermal stability - Ease of paralle. |
IRF643 Datasheet and Specifications PDF
The IRF643 is a FIELD EFFECT POWER TRANSISTOR.
| Part Number | IRF643 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | . . |
| Part Number | IRF643 Datasheet |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF64.
*Low RDS(on) *VGS Rated at ±20V *Silicon Gate for Fast Switching Speed *Rugged *Low Drive Requirements isc Product Specification IRF643 *DESCRITION *Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sole. |