The IRF7832 is a N-Channel 30-V (D-S) MOSFET.
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Height | 1.75 mm |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temp | 155 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF7832 Datasheet |
|---|---|
| Manufacturer | Freescale Semiconductor |
| Overview |
Freescale
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Syste.
* Low rDS(on) trench technology * Low thermal impedance * Fast switching speed Typical Applications: * White LED boost converters * Automotive Systems * Industrial DC/DC Conversion Circuits IRF7832/ MC7832 VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 6 @ VGS = 10V 8 @ VGS = 4.5V ID(A) 19 16 ABSOLUT. |
| Part Number | IRF7832 Datasheet |
|---|---|
| Description | HEXFET Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
PD - 94594E
IRF7832
Applications l Synchronous MOSFET for Notebook
VDSS
Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in
30V
Networking Systems
Benefits
l Very Low.
Max.
20
50
Units
°C/W
Notes through * are on page 10 1 06/30/05 IRF7832 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient S. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 372000 | 4000+ : 0.18988 USD | View Offer |
| Newark | 5457 | 1+ : 1.72 USD 10+ : 1.12 USD 25+ : 1 USD 50+ : 0.881 USD |
View Offer |
| Newark | 0 | 4000+ : 0.32 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF7832ZPBF | International Rectifier | HEXFET Power MOSFET |
| IRF7832PBF-1 | International Rectifier | Power MOSFET |
| IRF7832PBF | International Rectifier | HEXFET Power MOSFET |
| IRF7832Z | International Rectifier | Power MOSFET |