IRFB3207 Datasheet
IRFB3207 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested.
*Static drain-source on-resistance:
RDS(on) ≤4.5mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=.
IRFB3207 Datasheet (International Rectifier)
International Rectifier
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(o.
Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunct.