IRFD220 Datasheet and Specifications PDF

The IRFD220 is a N-Channel Power MOSFET.

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Part NumberIRFD220 Datasheet
ManufacturerIntersil
Overview IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET des.
* 0.8A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRFD220 Datasheet
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview . .
Part NumberIRFD220 Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerFairchild Semiconductor
Overview IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, a.
* 0.8A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRFD220 Datasheet
DescriptionPower MOSFET
ManufacturerVishay
Overview Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package i.
* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* Fast switching
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see DESCRIPTION Third generation power MOSFETs fro.

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