IRFD9220 Datasheet and Specifications PDF

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IRFD9220 Data Sheet July 1999 File Number 2286.3 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de.

* 0.6A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9220 PACKAGE HEXDIP BRAND IRFD9220 G S NOTE: When ordering.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package i.

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* P-channel
* Fast switching
* Ease of paralleling
* Material categorization: for definitions of compliance please see DESCRIPTION Third generation power MOSFETs from Vishay provide.