IRFF210 Datasheet and Specifications PDF

IRFF210 Data Sheet March 1999 File Number 1887.3 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de.

* 2.2A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.

~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS tec.

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
* Excellent thermal stability - Ease of paralle.

PD-90424D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF210 200V 1.5Ω ID 2.25A IRFF210 JANTX2N6784 JANTXV2N678.

n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous .