IRFP22N50A Datasheet and Specifications PDF

The IRFP22N50A is a SMPS MOSFET.

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Part NumberIRFP22N50A Datasheet
ManufacturerInternational Rectifier
Overview PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg resul. on Boost Notes  through … are on page 8 1 12/15/99 IRFP22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gat.
Part NumberIRFP22N50A Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum.
*Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX)
*Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Part NumberIRFP22N50A Datasheet
DescriptionPower MOSFET
ManufacturerVishay
Overview IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 32 52 Single D FEATURES 500 0.23 • Low Gate C. 500 0.23
* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS
* Switch Mode P.