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IRFP23N50L Datasheet

The IRFP23N50L is a SMPS MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFP23N50L
ManufacturerInternational Rectifier
Overview IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 44 72 Single D FEATURES 500 0.190 • Superfast. 500 0.190
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications
* Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness
* Higher Gate Voltage Threshold Offers Improved Noise Immunity .
Part NumberIRFP23N50L
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimu.
*Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX)
*Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
Part NumberIRFP23N50L
DescriptionPower MOSFET
ManufacturerVishay
Overview IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 150 44 72 Single 0.190 TO-247AC D G S D .
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications
* Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness
* Higher Gate Voltage Threshold Offers Improved Noise Immunity
* Complia.