IRFP27N60K Datasheet and Specifications PDF

PD - 94407 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low G.

W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ.
*
*
*
*
*
*
*
*
* Max. 530 27 50 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased.

iscN-Channel MOSFET Transistor IRFP27N60K ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.22Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum.

*Low drain-source on-resistance: RDS(ON) =0.22Ω (MAX)
*Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

IRFP27N60K Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V .

* Low gate charge Qg results in simple drive requirement
* Improved gate, avalanche and dynamic dV/dt Available ruggedness
* Fully characterized capacitance and avalanche voltage and current
* Enhanced body diode dV/dt capability
* Material categorization: for definitions of compliance please see ww.