The IRFR2407 is a Power MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.52 mm |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFR2407 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | l HEXFET® Power MOSFET D VDSS = 75V G S RDS(on) = 0.026Ω ID = 42A Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Re. |
| Part Number | IRFR2407 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR2407, IIRFR2407
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤26mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev.
*Static drain-source on-resistance: RDS(on)≤26mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VG. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 2291 | 5+ : 2.21 USD 10+ : 1.38 USD 25+ : 1.26 USD 50+ : 1.14 USD |
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| Future Electronics | 30000 | 2000+ : 1.21 USD 4000+ : 1.2 USD 6000+ : 1.19 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFR2407PbF | International Rectifier | Power MOSFET |