| Part Number | IRFR48Z Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu. l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free G IRFU48ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 11mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniqu. |
IRFR48Z Datasheet and Specifications PDF
The IRFR48Z is a Power MOSFET.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.52 mm |
| Length | 10.3886 mm |
| Width | 6.73 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFR48Z Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR48Z, IIRFR48Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic.
*Static drain-source on-resistance: RDS(on)≤11mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VG. |