Part Number	IRFS630A Datasheet
Manufacturer	Fairchild Semiconductor
Overview	Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Sou.