| Part Number | IRFZ44E Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe.
TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Stor. |
IRFZ44E Datasheet and Specifications PDF
The IRFZ44E is a Power MOSFET.
| Part Number | IRFZ44E Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ44E， IIRFZ44E
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M.
*Static drain-source on-resistance: RDS(on) ≤23mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |