| Part Number | IRFZ44N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an.
*Drain Current *ID=49A@ TC=25℃ *Drain Source Voltage- : VDSS= 55V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) *Fast Switching DESCRIPTION *Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are partic. |
IRFZ44N Datasheet
The IRFZ44N is a N-Channel MOSFET Transistor.
| Part Number | IRFZ44N |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32. |
| Part Number | IRFZ44N |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes . very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC. |