The IRLI630G is a Power MOSFET.
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.8 mm |
| Length | 10.63 mm |
| Width | 4.83 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRLI630G Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fu. ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P. |
| Part Number | IRLI630G Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eli.
* Isolated package * High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) * Sink to lead creepage distance = 4.8 mm * Logic-level gate drive * RDS(on) specified at VGS = 4 V and 5 V * Fast switching * Ease of paralleling * Material categorization: for definitions of compliance please see . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| TME | 0 | 1+ : 1.43 EUR 10+ : 1.29 EUR 50+ : 1.13 EUR 250+ : 1.01 EUR |
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| TME | 0 | 1+ : 1.43 USD 10+ : 1.29 USD 50+ : 1.13 USD 250+ : 1.01 USD |
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| element14 APAC | 0 | 1+ : 2.86 SGD 10+ : 2.06 SGD 100+ : 1.63 SGD 500+ : 1.34 SGD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRLI630A | Fairchild Semiconductor | ADVANCED POWER MOSFET |
| IRLI630A | International Rectifier | Advanced Power MOSFET |