IRLML6402 Datasheet
IRLML6402 Datasheet (International Rectifier)
International Rectifier
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed.
nd power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissip.
IRLML6402 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Ultra low on-resistance ·P-Channel MOSFET ·SOT-23 Footprint ·Available in tape and reel ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed s.
L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= -4.5V; ID= -3.7A VGS= -2.5V; ID= -3.1A IGSS Gate Source Leakage Current VG.
IRLML6402 Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 (KRLML6402) ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. .
* Ultra low on-resistance.
* P-Channel MOSFET.
* SOT-23 Footprint.
* Low profile(＜1.1mm).
* Available in tape and reel.
* Fast switching.
+2.4 0.1 - 0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
0-0.1 +0.38 0.1
-0.1
+0.97 0.1 -0.1
+0.11.3 - 0 .1
0.55 0.4
Unit: mm
0.1.