The IRLR3303 is a Power MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRLR3303 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi. 1A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan. |
| Part Number | IRLR3303 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRLR3303,IIRLR3303
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤31mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi.
*Static drain-source on-resistance: RDS(on)≤31mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VG. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| RS (Formerly Allied Electronics) | 0 | 900+ : 1.29 USD | View Offer |
| Avnet | 0 | - | View Offer |
| Component Stockers USA | 13011 | 1+ : 0.6 USD 10+ : 0.59 USD 100+ : 0.57 USD 1000+ : 0.55 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRLR3303PBF | International Rectifier | HEXFET Power MOSFET |