| Part Number | IRLR3705Z Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ Description Specifically designed for Automotive applications, this HEX. |
IRLR3705Z Datasheet and Specifications PDF
The IRLR3705Z is a AUTOMOTIVE MOSFET.
| Part Number | IRLR3705Z Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRLR3705Z, IIRLR3705Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.0mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance: RDS(on)≤8.0mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast Switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 V. |