| Part Number | IRLZ44N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi.
VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting. |
IRLZ44N Datasheet and Specifications PDF
The IRLZ44N is a Power MOSFET.
| Part Number | IRLZ44N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ44N， IIRLZ44N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤22mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M.
*Static drain-source on-resistance: RDS(on) ≤22mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |