| Part Number | IXTK180N15 Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview |
Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 180N15
VDSS ID25
RDS(on)
= 150 V = 180 A = 10 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS).
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
300 0.7/6 10
* Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * International standard package * Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS I. |
IXTK180N15 Datasheet and Specifications PDF
The IXTK180N15 is a Power MOSFET.
Key Specifications
| Package | TO-264 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTK180N15 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 10mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot .
*Drain Source Voltage- : VDSS= 150V(Min) *Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters . |