| Part Number | IXTM40N30 Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω Symbol VDSS VDGR VGS VGSM ID. l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions . |
IXTM40N30 Datasheet and Specifications PDF
The IXTM40N30 is a Power MOSFET.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | IXTM40N30 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 300V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 88mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot .
*Drain Source Voltage- : VDSS= 300V(Min) *Static Drain-Source On-Resistance : RDS(on) = 88mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters . |