| Part Number | IXTP62N15P Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IXTP62N15P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot .
*Static drain-source on-resistance: RDS(on) ≤ 40mΩ *Fully characterized avalanche voltage and current *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATION *DC/DC Converter *Ideal for high-frequency switching and synchronous rectific. |
IXTP62N15P Datasheet and Specifications PDF
The IXTP62N15P is a N-Channel MOSFET.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.15 mm |
| Length | 10.66 mm |
| Width | 4.83 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTP62N15P Datasheet |
|---|---|
| Description | PolarHT Power MOSFET |
| Manufacturer | IXYS |
| Overview | PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 62N15P IXTP 62N15P IXTQ 62N15P VDSS ID25 RDS(on) = 150 V = 62 A ≤ 40 mΩ TO-263 (IXTA) Symbol VDSS VDGR . l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C Characteristic Values Min. Typ. Max. 150 3.0 5.5 ±100 25 250 33 40 V V nA µA µA mΩ l l Internati. |