| Part Number | IXTQ200N085T Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID. Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and . |
IXTQ200N085T Datasheet and Specifications PDF
The IXTQ200N085T is a Power MOSFET.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTQ200N085T Datasheet |
|---|---|
| Description | N-ChannelMOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 85V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va.
*Drain Source Voltage- : VDSS= 85V(Min) *Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters *A. |